06.02.15
Nantero closed a $31.5 million Series E financing round, which included new investors and participation from existing investors Charles River Ventures, Draper Fisher Jurvetson, Globespan Capital Partners, and Harris & Harris Group.
This substantially oversubscribed round highlights Nantero’s ongoing success in delivering a new generation of super-fast, ultra-high density memory called NRAM (non-volatile random access memory) that can enable a variety of new features and products in both consumer and enterprise electronics.
Signaling a new era in memory, Nantero’s NRAM has already been installed in multiple production fabs and is currently being designed into new electronic products that require increased storage, low power consumption, high speed, reliability and high endurance. The company intends to use its new funding to continue the acceleration of NRAM as the leading next–generation memory for both storage class memory and as a replacement for flash and DRAM.
“With Nantero’s NRAM, the wait for a new generation of super-fast, high-density non-volatile memory is over,” said Greg Schmergel, co-founder, president and CEO of Nantero, Inc. “Our technology is already under development today in multiple world-class manufacturing facilities and we have more than a dozen major corporate partners actively working on NRAM.”
Highlighting the growing industry support for NRAM, Nantero also announced the addition of two new key advisors to the company, including Dr. Stefan Lai, a previous Intel senior executive who co-invented the EPROM tunnel oxide (ETOX) flash memory cell and led the company’s phase change memory (PCM) team.
Also joining Nantero’s advisory board is Dr. Yaw Wen Hu, a previous EVP and current Board member of Inotera Memories, where he oversaw new DRAM technology transfer and development of wafer level packaging. Before that, Dr. Hu was an EVP and COO for Silicon Storage Technology (SST).
The availability of a new generation of memory that is 100s of times faster than NAND, can deliver terabits of storage capacity, and consumes very little power, has the potential to change the future of electronics. Nantero’s NRAM has all of these breakthrough characteristics. Targeting both the embedded and standalone memory markets, Nantero is already licensing its NRAM IP to major chip manufacturers, foundries and electronics companies around the world.
Targeting a wide range of markets such as consumer electronics, mobile computing, wearables, Internet of Things, enterprise storage, government/military, space, and automotive, Nantero’s NRAM delivers major advantages over other memory technologies.
This substantially oversubscribed round highlights Nantero’s ongoing success in delivering a new generation of super-fast, ultra-high density memory called NRAM (non-volatile random access memory) that can enable a variety of new features and products in both consumer and enterprise electronics.
Signaling a new era in memory, Nantero’s NRAM has already been installed in multiple production fabs and is currently being designed into new electronic products that require increased storage, low power consumption, high speed, reliability and high endurance. The company intends to use its new funding to continue the acceleration of NRAM as the leading next–generation memory for both storage class memory and as a replacement for flash and DRAM.
“With Nantero’s NRAM, the wait for a new generation of super-fast, high-density non-volatile memory is over,” said Greg Schmergel, co-founder, president and CEO of Nantero, Inc. “Our technology is already under development today in multiple world-class manufacturing facilities and we have more than a dozen major corporate partners actively working on NRAM.”
Highlighting the growing industry support for NRAM, Nantero also announced the addition of two new key advisors to the company, including Dr. Stefan Lai, a previous Intel senior executive who co-invented the EPROM tunnel oxide (ETOX) flash memory cell and led the company’s phase change memory (PCM) team.
Also joining Nantero’s advisory board is Dr. Yaw Wen Hu, a previous EVP and current Board member of Inotera Memories, where he oversaw new DRAM technology transfer and development of wafer level packaging. Before that, Dr. Hu was an EVP and COO for Silicon Storage Technology (SST).
The availability of a new generation of memory that is 100s of times faster than NAND, can deliver terabits of storage capacity, and consumes very little power, has the potential to change the future of electronics. Nantero’s NRAM has all of these breakthrough characteristics. Targeting both the embedded and standalone memory markets, Nantero is already licensing its NRAM IP to major chip manufacturers, foundries and electronics companies around the world.
Targeting a wide range of markets such as consumer electronics, mobile computing, wearables, Internet of Things, enterprise storage, government/military, space, and automotive, Nantero’s NRAM delivers major advantages over other memory technologies.