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    Breaking News

    Imec Presents Successors to FinFET for 7nm

    Showcases research on GAA NW, quantum-well FinFETs.

    Related CONTENT
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    • Holst Centre Wins IDTechEx Printed Electronics Europe 2017 Award for IME Demonstrator
    06.18.15
    At VLSI 2015 Symposium in Kyoto, Japan, imec reported new results on nanowire FETs and quantum-well FinFETs towards post-FinFET multi-gate device solutions.

    As the major portion of the industry adopts FinFETs as the workhorse transistor for 16nm and 14nm, researchers worldwide are looking into the limits of FinFETs and potential device solutions for the 7nm node and beyond. Two approaches, namely Gate-All-Around Nanowire (GAA NW) FETs, which offer significantly better short-channel electrostatics, and quantum-well FinFETs (with SiGe, Ge, or III-V channels), which achieve high carrier mobility, are promising options.

    For the first time, imec demonstrated the integration of these novel device architectures with state-of-the-art technology modules like Replacement-Metal-Gate High-k (RMG-HK) and Self (Spacer)-Aligned Double-Patterned (SADP) dense fin structures.

    Imec’s research into advanced logic scaling is performed with imec’s key partners in its core CMOS programs, including GLOBALFOUNDRIES, INTEL, Micron, Panasonic, Samsung, SK hynix, Sony and TSMC.
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    Imec, Cascade Microtech Develop First Automatic Probe System for Advanced 3D Chips Imec, Cascade Microtech Develop First Automatic Probe System for Advanced 3D Chips
    STMicroelectronics Making Everything Smarter at CommunicAsia 2017 STMicroelectronics Making Everything Smarter at CommunicAsia 2017
    Imec Introduces First Thin-Silicon Implantable Chip for High-Precision Haptic Prosthetics Imec Introduces First Thin-Silicon Implantable Chip for High-Precision Haptic Prosthetics
    Imec Introduces First Thin-Silicon Implantable Chip for High-Precision Haptic Prosthetics Imec Introduces First Thin-Silicon Implantable Chip for High-Precision Haptic Prosthetics
    Holst Centre Wins IDTechEx Printed Electronics Europe 2017 Award for IME Demonstrator Holst Centre Wins IDTechEx Printed Electronics Europe 2017 Award for IME Demonstrator
    Imec Develops Bifacial n-PERT Solar Cell with a Record 22.8% Front-Side Efficiency Imec Develops Bifacial n-PERT Solar Cell with a Record 22.8% Front-Side Efficiency
    STMicroelectronics Making Everything Smarter at IoT Asia 2017 STMicroelectronics Making Everything Smarter at IoT Asia 2017
    STMicroelectronics Showcases Latest Solutions for Smart Driving at Automotive World 2017 STMicroelectronics Showcases Latest Solutions for Smart Driving at Automotive World 2017
    Major Corporations to Discuss Opportunities at PE USA 2016 Major Corporations to Discuss Opportunities at PE USA 2016
    Major Corporations to Discuss Opportunities at PE USA 2016 Major Corporations to Discuss Opportunities at PE USA 2016
    Imec Demonstrates Gate-All-Around MOSFETs with Lateral Silicon Nanowires at Scaled Dimensions Imec Demonstrates Gate-All-Around MOSFETs with Lateral Silicon Nanowires at Scaled Dimensions
    Imec Boosts Performance of Beyond-Silicon Devices Imec Boosts Performance of Beyond-Silicon Devices
    Imec Improves Performance, Reliability of Deeply-scaled CMOS Logic Devices Imec Improves Performance, Reliability of Deeply-scaled CMOS Logic Devices
    Imec Advances Drive Current in Vertical 3D NAND Memory Devices Imec Advances Drive Current in Vertical 3D NAND Memory Devices
    Printed Electronics Now’s 1Q 2015 Top Five Online Stories Printed Electronics Now’s 1Q 2015 Top Five Online Stories

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