07.10.15
Building on years of close collaboration and numerous joint research programs, STMicroelectronics and the French Institute of Materials, Microelectronics and Nanosciences in Provence (IM2NP – CNRS / Aix-Marseille University / University of Toulon / ISEN engineering school), member of the Carnot STAR (Science and Technology for Research Applications) Institute, have announced the official launch of a new joint research laboratory to develop the next generations of high-reliability, ultra-miniaturized electronic components.
The Radiation Effects and Electrical Reliability (REER) Joint Laboratory is a multi-site research establishment that will bring together teams from the IM2NP Institute, based in Marseille and Toulon, and engineers from the ST facility in Crolles, near Grenoble.
The REER Joint Laboratory’s science program will focus on two main areas of research: the effect of radiation on digital nanometer-scale circuits and the electrical reliability of nanometer-scale CMOS (complementary metal-oxide semiconductor) technologies.
Challenges need to be overcome in the development of future nanoelectronic technologies. The joint laboratory’s research will range from the most fundamental aspects of phenomena at the atomic level to systems, materials, the physics of devices and the design of robust circuits.
Recently opened, the joint laboratory is already involved in numerous collaborative programs and projects at the national, European and international level.
The Radiation Effects and Electrical Reliability (REER) Joint Laboratory is a multi-site research establishment that will bring together teams from the IM2NP Institute, based in Marseille and Toulon, and engineers from the ST facility in Crolles, near Grenoble.
The REER Joint Laboratory’s science program will focus on two main areas of research: the effect of radiation on digital nanometer-scale circuits and the electrical reliability of nanometer-scale CMOS (complementary metal-oxide semiconductor) technologies.
Challenges need to be overcome in the development of future nanoelectronic technologies. The joint laboratory’s research will range from the most fundamental aspects of phenomena at the atomic level to systems, materials, the physics of devices and the design of robust circuits.
Recently opened, the joint laboratory is already involved in numerous collaborative programs and projects at the national, European and international level.