GaN technology offers faster switching-power devices with higher breakdown voltage and lower on-resistance than silicon, making it an ideal material for advanced power electronic components. The partnership builds on promising results achieved in a recent project, in which imec and IQE collaborated to fabricate GaN power diodes using imec’s proprietary diode architecture and IQE’s high voltage epiwafers.
IQE enters imec’s GaN-on-Si Industrial Affiliation Program that offers joint research and development on GaN-on-Si 200mm epitaxy and enhancement mode device technology to a variety of companies including IDMs, equipment and material suppliers, fabless design houses and packaging companies.
“The importance of GaN on Si for power devices cannot be understated, particularly as we enter an era of electrically propelled transportation and increasing demands for energy efficient power control systems that require high voltage and high power capabilities,” Wayne Johnson, head of IQE’s Power Business Unit, said.
In its earlier collaborative project, imec worked with IQE to create state-of-the-art GaN power diodes.