“5G is likely the single greatest technological innovation we will see in the foreseeable future in terms of its impact on society, enabling the future connected world,” said Paul Hart, SVP and GM of RF Power at NXP. “At NXP, we have been innovating in this space for 60 years. At this year’s IMS, we are excited to demonstrate these key enablers of 5G with our new GaN and silicon LDMOS products.”
As the number of connected devices and smart applications continues to increase, NXP is providing purpose-built power amplifier (PA) solutions to support the size, power and frequency bands needed for 5G new radio (NR). According to a recently published IHS Markit study, the adoption of 5G mobile technology could enable $12.4 trillion of global economic output by 2035. NXP’s RF high-performance cellular infrastructure products and technologies are already being used by top cellular infrastructure OEMs in their product designs for 5G NR.
NXP is committed to the successful deployment of best-in-class GaN technology. From 2015 to 2016, NXP more than doubled its offering of GaN RF transistors. By continuing to increase its GaN offerings in 2017, NXP will not only be able to better serve the cellular infrastructure markets, but also offer full GaN lineups in a variety of power ranges for industrial and defense markets.