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    Breaking News

    Imec Shows Ultra-Scaled FETs with 2D-Material Channel

    2D materials paving way to extreme scaling for logic and memory transistors.

    Imec Shows Ultra-Scaled FETs with 2D-Material Channel
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    12.09.19
    At this year’s IEEE International Electron Devices Meeting (Dec. 7-11, 2019), imec reported an in-depth study of scaled transistors with MoS2 and demonstrated best device performance to date for such materials.

    MoS2 is a 2D material, meaning that it can be grown in stable form with nearly atomic thickness and atomic precision. Imec synthesized the material down to monolayer (0.6nm thickness) and fabricated devices with scaled contact and channel length, as small as 13nm and 30nm respectively.

    These very scaled dimensions, combined with scaled gate oxide thickness and high K dielectric, have enabled the demonstration of some of the best device performances so far. Most importantly, these transistors enable a comprehensive study of fundamental device properties and calibration of TCAD models. The calibrated TCAD model is used to propose a realistic path for performance improvement. The results presented here confirm the potential of 2D-materials for extreme transistor scaling – benefiting both high-performance logic and memory applications.

    Theoretical studies recommend 2D materials as the perfect channel material for extreme transistor scaling as only little short channel effects are expected compared to the current Si-based devices. Hints of this potential have already been published with one-of-a-kind transistors built on natural flakes of 2D materials.

    For the first time, imec has tested these theoretical findings through a comprehensive set of 2D-materials-based transistor data. The devices with the smallest footprint have a channel length of 30nm and <50nm contact pitch. ON current as high as 250µA/µm has been demonstrated with 50nm SiO2 gate dielectric. On current of ~ 100 µA/µm and an excellent SSmin of 80mV/dec (for VD =50mV) have been demonstrated with 4nm HfO2 in a backgated configuration. The device performance is not impacted by contact length scaling, confirming that carriers are injected from the edge of the contact metal directly into the channel, in line with TCAD simulations. The work confirms that TCAD models capture large parts of device physics and guide experimental validation and mapping the application space. Part of the paper that is presented at IEDM, is dedicated to setting the path for device optimization for reaching Si-like performance targets.

    “Although still an order of magnitude away from Si transistors, we have brought our MOSFET devices into a realm where they show promising performance for future logic and memory applications,” said Iuliana Radu, director of Exploratory and Quantum Computing imec. “To bridge this order of magnitude, we have identified a path of systematic improvements such as a further reduction of the gate oxide thickness, the implementation of a double-gated architecture, and further reduction of channel and interface defects.” 
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    Related Breaking News

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      Imec’s Ultrasound Sensor Technology Helps Determine Arterial Stiffness

      Imec’s Ultrasound Sensor Technology Helps Determine Arterial Stiffness

      The sensor could be scaled to the size of a portable or wearable device.
      07.01.21

    • Breaking News | Graphene, Perovskites and Carbon Nanotubes | Photovoltaics | Research Institutions | Universities
      Tandem Breakthrough by Solliance Partners

      Tandem Breakthrough by Solliance Partners

      TNO, imec/EnergyVille and the Eindhoven University of Technology, realized an 18.6% efficient highly near-infrared transparent perovskite solar cell.
      04.26.21

    • Breaking News | Flexible and Printed Electronics | Personnel | Research Institutions | Semiconductors and Quantum Dots
      SEMI Appoints imec, Soitec Executives to Europe Advisory Board

      SEMI Appoints imec, Soitec Executives to Europe Advisory Board

      Luc Van den hove, president and CEO of imec appointed chair; Paul Boudre, CEO of Soitec, appointed vice-chair.
      04.23.21


    • Breaking News | Photovoltaics | Research Institutions
      imec: Decade of R&D Establishes Europe in Thin-film PV

      imec: Decade of R&D Establishes Europe in Thin-film PV

      An overview of imec’s contributions to a decade of thin-film-PV research and how this fits in the bigger picture.
      Tom Aernouts and Jef Poortmans, R&D Manager of Thin-Film PV, imec and imec Fellow and the Program Director of the Energy activities of imec 03.31.21

    • Breaking News | Research Institutions | Sensors and Wearables
      Imec Demonstrates Ultra-sensitive, Small Optomechanical Ultrasound Sensor in Silicon Photonics

      Imec Demonstrates Ultra-sensitive, Small Optomechanical Ultrasound Sensor in Silicon Photonics

      The 20-µm small sensor has a detection limit two orders of magnitudes better than piezoelectric elements of identical size.
      03.24.21

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