Ferroelectric RAM


Ferroelectric RAM (FeRAM or FRAM) is a random access memory similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile memory technologies that offer the same functionality as Flash memory.

Compared to its more modern competitors MRAM and PCM, FeRAM volume production at Fujitsu began in 1999. FeRAMs at 1 megabit density were available in high volume in 2006 from both Fujitsu and Ramtron, a fabless semiconductor company.

Source: Wikipedia
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