AIXTRON Receives CS Manufacturing Award 2013 for AIX G5+ GaN-on-Si Technology

Posted on March 5, 2013 @ 02:53 pm

AIXTRON SE announced that it has been awarded the 2013 Compound Semiconductor Manufacturing Award for its latest development, the AIX G5+ reactor for gallium nitride on silicon (GaN-on-Si). The award recognizes key areas of innovation surrounding the chip manufacturing process from research to completed device, focusing on the people, processes and products that drive the industry forward.

Editor Richard Stevenson from Compound Semiconductor (CS) magazine presented the award to Dr. Frank Schulte, AIXTRON’s vice president Europe.

“Delivering results on the leading edge of GaN-on-Si technology, we are very pleased that our achievements are recognized by the compound semiconductor industry through this prestigious prize,” said Andreas Toennis, chief technology officer at AIXTRON SE, “The AIX G5+ reactor has been specifically designed to produce GaN based devices on silicon without compromising performance or yield compared to processes on sapphire substrates.”

“GaN-on-Si is a very promising technology for future power electronics applications and high brightness LED manufacturing,” Dr. Schulte added.


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