“Development and mass production of the industry’s smallest feature size DRAM node are a testament to Micron’s world-class engineering and manufacturing capabilities, especially at a time when DRAM scaling is becoming extremely complex,” said Scott DeBoer, EVP of technology development for Micron Technology. “Being first to market strongly positions us to continue offering high-value solutions across a wide portfolio of end customer applications.”
Micron’s 1z nm 16Gb DDR4 product delivers higher bit density, as well as performance enhancements and lower cost compared to the previous generation 1Y nm node. It also reinforces Micron’s continued progress in delivering improvements in relative performance and power consumption for compute DRAM (DDR4), mobile DRAM (LPDDR4) and graphics DRAM (GDDR6) product lines. The optimized balance between power and performance will be a key differentiator for applications including, among others, artificial intelligence, autonomous vehicles, 5G, mobile devices, graphics, gaming, network infrastructure and servers.