11.22.18
AIXTRON SE will deliver multiple AIX G5+ C MOCVD systems to InnoScience Technology Co., Ltd. (China) for the development of GaN power devices which are more and more favored over Si power devices in various applications due to their superior performance at high frequency. All AIXTRON cluster tools will feature a 5x200 mm configuration and will be shipped until Q2/2019.
GaN power devices have very low conduction loss, switching loss and off state loss compared to the traditional Si-based power chips due to a higher breakdown strength, faster-switching speed, higher thermal conductivity, and lower on-resistance. GaN power devices are being used already today for applications such as efficient power supplies for PC and servers or LiDAR and wireless power transfer requiring high-speed switching higher than 1 MHz. In addition, they also have advantages for electric vehicles applications like On-Board Chargers because of significantly reduced system size by superior thermal properties and reduction of the passive components.
In the scope of the increasing number of applications, AIXTRONs AIX G5+ C platform can play out its advantages in the manufacturing process since the system allows for scalable processes, tight uniformity and particle control of the epitaxial wafers to enable the highest yield and maximum throughput at the lowest cost of ownership.
"We have chosen the AIX G5+ C as it has proven to provide excellent thickness and wafer uniformity due to the superior capabilities of the Planetary batch reactor concept,” InnoScience Technology CEO Jay Son said. “The newly acquired systems will enable us to ramp up manufacturing of our high-end products such as 650V GaN-on-Si devices with the best cost per wafer in the market."
"Market demand for power electronics, especially for GaN-based devices is picking up speed with AIXTRON having the most capable system available in the market. We are pleased that InnoScience... has decided to select this system which convinces not only by performance but also by making the production of GaN power devices commercially viable," added Dr. Felix Grawert, president of AIXTRON SE.
GaN power devices have very low conduction loss, switching loss and off state loss compared to the traditional Si-based power chips due to a higher breakdown strength, faster-switching speed, higher thermal conductivity, and lower on-resistance. GaN power devices are being used already today for applications such as efficient power supplies for PC and servers or LiDAR and wireless power transfer requiring high-speed switching higher than 1 MHz. In addition, they also have advantages for electric vehicles applications like On-Board Chargers because of significantly reduced system size by superior thermal properties and reduction of the passive components.
In the scope of the increasing number of applications, AIXTRONs AIX G5+ C platform can play out its advantages in the manufacturing process since the system allows for scalable processes, tight uniformity and particle control of the epitaxial wafers to enable the highest yield and maximum throughput at the lowest cost of ownership.
"We have chosen the AIX G5+ C as it has proven to provide excellent thickness and wafer uniformity due to the superior capabilities of the Planetary batch reactor concept,” InnoScience Technology CEO Jay Son said. “The newly acquired systems will enable us to ramp up manufacturing of our high-end products such as 650V GaN-on-Si devices with the best cost per wafer in the market."
"Market demand for power electronics, especially for GaN-based devices is picking up speed with AIXTRON having the most capable system available in the market. We are pleased that InnoScience... has decided to select this system which convinces not only by performance but also by making the production of GaN power devices commercially viable," added Dr. Felix Grawert, president of AIXTRON SE.
